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Time evolution of morphology and electronic state of oxidized Si(110) during reduction process

矢野雅大; 魚住雄輝*; 保田諭; 朝岡秀人

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We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.